Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• unpredictable programming feature in phase-change memory devices can be utilized in hardware security applications. Keywords: amorphous materials; drift; electrical breakdown; electrical resistivity; phase-change memory; pulse measurement; stochastic processes; threshold switching; Introduction Phase-change

Review of time-resolved non-contact electrostatic force microscopy techniques with applications to ionic transport measurements

• Aaron Mascaro,
• Yoichi Miyahara,
• Tyler Enright,
• Omur E. Dagdeviren and
• Peter Grütter

Beilstein J. Nanotechnol. 2019, 10, 617–633, doi:10.3762/bjnano.10.62

• the charge being unable to get in and out of the sample on these fast timescales. The extracted time constant for the charging time, τc, was 34 ± 5 ns. Application to ionic transport measurements From this voltage-pulse measurement it is clear that this technique can easily be extended to measure

Pulse-response measurement of frequency-resolved water dynamics on a hydrophilic surface using a Q-damped atomic force microscopy cantilever

• Masami Kageshima

Beilstein J. Nanotechnol. 2012, 3, 260–266, doi:10.3762/bjnano.3.29

•  5b the same signals with the tip brought close to the point of contact. Since the feedback of the sample stage is temporarily held during the pulse measurement, the accurate value of the tip–substrate gap is not known for the data shown in Figure 5b. The cantilever deflection signal swings by 2.5 mV